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| Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE General Description The AP4310 is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. The device contains two Op Amps and a 2.5V precision shunt voltage reference. Op Amp 1 is designed for voltage control with its non-inverting input internally connects to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. The AP4310 is available in standard packages of DIP8 and SOIC-8. AP4310 Features Op Amp * Input Offset Voltage: 0.5mV * Supply Current: 75A per Op Amp at 5.0V Supply Voltage * Unity Gain Bandwidth: 1MHz * Output Voltage Swing: 0 to (VCC -1.5) V * Power Supply Range: 3 to 36V Voltage Reference * Fixed Output Voltage Reference: 2.5V * Voltage Tolerance: 0.4%, 1% * Sink Current Capability: 0.05 to 80mA * Typical Output Impedance: 0.2 Applications * * Battery Charger Switching Power Supply SOIC-8 DIP-8 Figure 1. Package Types of AP4310 Jul. 2006 Rev. 1. 3 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 INPUT 1INPUT 1+ / VKA GND 1 2 3 4 8 7 6 5 VCC OUTPUT 2 INPUT 2INPUT 2+ AP4310 Top View Figure 2. Pin Configuration of AP4310 Functional Block Diagram OUTPUT 1 1 Op Amp 1 + 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ / VKA + 3 6 Op Amp 2 INPUT 2- GND 4 5 INPUT 2+ Figure 3. Functional Block Diagram of AP4310 Jul. 2006 Rev. 1. 3 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Ordering Information AP4310 AP4310 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 Circuit Type Voltage Tolerance A: 0.4% Blank: 1% Package Reference Voltage 2.5V Voltage Tolerance Temperature Range -40 to105oC Part Number Tin Lead AP4310AP AP4310P Lead Free AP4310AP-E1 AP4310P-E1 AP4310AM-E1 AP4310AMTR-E1 AP4310M-E1 AP4310MTR-E1 Marking ID Tin Lead AP4310AP AP4310P 4310AM 4310AM 4310M 4310M Lead Free AP4310AP-E1 Packing Type Tube 0.4% DIP-8 1% 0.4% AP4310P-E1 AP4310AM-E1 Tube SOIC-8 2.5V -40 to105oC AP4310AM AP4310AMTR -40 to105oC AP4310M AP4310MTR AP4310AM-E1 Tape & Reel AP4310M-E1 AP4310M-E1 Tube Tape & Reel 1% BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 3 3 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage (VCC to GND) Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) Op Amp 2 Input Differential Voltage (Pins 5, 6) Voltage Reference Cathode Current (Pin 3) Power Dissipation (TA=25oC) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) Symbol VCC VIN VID IK DIP-8 PD TJ TSTG TLEAD SOIC-8 150 -65 to 150 260 Value 40 -0.3 to VCC+0.3 40 100 800 500 mW o o o AP4310 Unit V V V mA C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Temperature Min 3 -40 Max 36 105 Unit V o C Jul. 2006 Rev. 1. 3 4 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Electrical Characteristics Operating Conditions: VCC =+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ 0.15 0.20 Max 0.25 mA 0.30 Unit AP4310 Total Supply Current, excluding Cur- V =5V, no load, -40oCT 105oC CC A rent in Voltage Reference VCC=30V, no load, -40oCTA105oC Voltage Reference Section AP4310A Reference Voltage AP4310 IK=10mA TA=25oC -40oCTA105oC TA=25oC -40oCTA105oC Reference Voltage Deviation Over Full Temperature Range Minimum Cathode Current for Regulation Dynamic Impedance IK=1.0 to 80mA, f<1kHz IK=10mA, TA=-40 to 105oC 2.49 2.48 2.475 2.45 2.50 2.50 2.50 2.50 5 0.01 0.2 2.51 V 2.52 2.525 V 2.55 24 0.05 0.5 mV mA Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) Input Offset Voltage TA=25oC TA=-40 to Input Offset Voltage Temperature Drift 105oC 7 0.5 3 mV 5 TA=-40 to 105oC V/oC 150 nA dB dB mA mA V 100 mV V/ s Input Bias Current (Inverting Input T =25oC A Only) Large Signal Voltage Gain Power Supply Rejection Ratio Source Output Current Sink VCC=15V, RL=2k, VO=1.4 to 11.4V VCC=5 to 30V VCC=15V, VID =1V, VO=2V VCC=15V, VID=-1V, VO=2V VCC=30V, RL=10k, VID=1V VCC=30V, RL =10k, VID=-1V VCC=18V, RL=2k, AV =1, VIN=0.5 to 2V, CL =100pF VCC=30V, RL =2k, CL=100pF 0.2 85 70 20 7 27 20 100 90 40 20 28 17 0.5 Output Voltage Swing (High) Output Voltage Swing (Low) Slew Rate Unity Gain Bandwidth 0.7 1.0 MHz Jul. 2006 Rev. 1. 3 5 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Electrical Characteristics (Continued) Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit AP4310 Op Amp 2 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) Input Offset Voltage TA=25oC TA=-40 to 105oC Input Offset Voltage Temperature T =-40 to 105oC A Drift Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Large Signal Voltage Gain Power Supply Rejection Ratio Source Output Current Sink TA=25oC TA=25oC VCC=0 to 36V TA=25oC, VCM =0 to 3.5V VCC=15V, RL =2k, VO=1.4 to 11.4V VCC=5 to 30V VCC=15V, VID=1V, VO=2V VCC=15V, VID=-1V, VO=2V VCC=30V, RL =10k, VID=1V VCC=30V, RL =10k, VID=-1V VCC=18V, RL=2k, AV=1, VIN =0.5 to 2V, CL =100pF VCC=30V, RL=2k, CL=100pF 0.2 0 70 85 70 20 85 100 90 40 7 2 20 30 150 VCC-1.5 0.5 3 mV 5 V/oC nA nA V dB dB d mA mA V 100 7 27 20 28 17 Output Voltage Swing (High) Output Voltage Swing (Low) Slew Rate mV V/ s 0.5 1.0 Unity Gain Bandwidth 0.7 MHz Jul. 2006 Rev. 1. 3 6 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Typical Performance Characteristics AP4310 2.510 150 2.505 Reference Voltage (V) Cathode Current (mA) 100 VKA=VREF TA=25 C 0 2.500 50 2.495 2.490 0 2.485 -50 2.480 -40 -20 0 20 40 60 o 80 100 120 -100 -2 -1 0 1 2 3 Ambient Temperature ( C) Cathode Voltage (V) Figure 4. Reference Voltage vs. Ambient Temperature Figure 5. Cathode Current vs. Cathode Voltage 30 110 25 100 Input Bias Current (nA) 20 Voltage Gain(dB) 90 15 80 10 RL=2K RL=20K 70 5 0 -40 -20 0 20 40 60 o 80 100 120 60 0 2 4 6 8 10 12 14 16 18 20 Ambient Temperature ( C) Supply Voltage (V) Figure 6. Input Bias Current vs. Ambient Temperature Figure 7. Op Amp Voltage Gain Jul. 2006 Rev. 1. 3 7 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Typical Application R1 AP4310 Opto Isolator R6 AC Line SMPS Op Amp 2 + R7 Battery Pack R3 R4 R5 Current Sense R2 Op Amp 1 + R8 AP4310 Figure 8. Application of AP4310 in a Constant Current and Constant Voltage Charger Jul. 2006 Rev. 1. 3 8 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Mechanical Dimensions: DIP-8 Unit: mm(inch) AP4310 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Jul. 2006 Rev. 1. 3 9 BCD Semiconductor Manufacturing Limited Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE Mechanical Dimensions (Continued): SOIC-8 Unit: mm(inch) AP4310 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 3 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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